광소자 적용을 위한 코발트 실리사이드의 전기적 특성

Abstract

In this paper, the CoSi2 films with thicknesses of about 5??m were deposited on n-type silicon(100) substrates by RF magnetron sputtering method using a CoSi2 target(99.99%). The flow rate of argon of 20sccm, substrate temperature of 100??, RF power of 20watts, 30watts, 40watts, and 50watts deposition time of 10 minutes, and the vacuum of 5?~10-5Torr. The annealing treatments of the CoSi2 thin film were performed from 500, 700 and 900?? for 1h in the air ambient by an electrical furnace. In order to investigate the structural character of the CoSi2 thin film X-ray diffraction(XRD) patterns were measured using the X-ray diffractometer. The structure of the thin films as also investigated by using scanning the electron microscope(SEM). The surface morphology of the thin films was measured with a atomic force microscopy(AFM). The optical transmission of the CoSi2 thin film is in the wavelength range of 850-1300nm. Temperature dependence of sheet resistance and property of Hall effect analyzed in the CoSi2 thin film at the temperature of 40-300K. The CoSi2/Si contacts showed the properties of diode. In this study, the lattice constant of the CoSi2 thin film was 5.361?? by the XRD. The thickness of the CoSi2 thin film was 480nm as measured by Ellipsometry. As the effects of thickness-uniformity on the CoSi2 thin film was investigated for an enhancement of thickness-uniformity. RMS roughness and peak to valley roughness of the CoSi2 thin film were 1.72nm and 11.7nm at RF power(50W) and annealing temperature of 900??. Temperature coefficient of resistance of the CoSi2 thin film showed 32????-cm at annealing temperature of 900??. Hall effect measurements on the CoSi2 thin film show a metal like conductivity and positive Hall coefficient. The carrier density of the CoSi2 thin film showed 1.59?~1022cm-3 at RF power(50W) and annealing temperature of 900??. The carrier mobility of the CoSi2 thin film showed 1.6cm2/V․s at RF power(50W) and annealing temperature of 900??. The CoSi2 diode sample was determined using current-voltage(I-V) characteristics. The current density of the CoSi2 thin film showed from 10-5 to 10-2A.