CMP 압력변화에 의한 BLT Capacitor의 전기적 특성

Abstract

BLT thin films have many advantages such as highly fatigue resistance, low processing temperature, and large remanent polarization for high-density ferroelectric memories. However, the problems by plasma etching in patterning process of BLT thin films such as the angled sidewall preventing the densification of ferroelectric memory and being apt to receive the plasma damage were reported. Chemical mechanical polishing process was proposed to fabricate the ferroelectric capacitor instead of plasma etching process for the vertical profile without plasma damage.