열화학증착 과정에서의 수평 ITO 나노와이어의 성장 기구

Abstract

ITO is the best material to make wide band cap transparent semiconductor for a flat display. Because ITO has high electric conductivity and also high penetrability semiconductor. Additionally ITO can be used to run gas sensor. ITO is mainly made by a thin film and the present sate of study is focused on that manufacture, has high electric conductivity and penetrability. The problems are high payment and exhaustion of Indium for make a thin film of ITO, and to replace all these things many study is passing off by clear electrode. Those are new rising materials, can be used for clear electode; there are Transparent Conduction Oxide TCO, Silver nanowire, Carbon nanotube, CNT, Graphene, Conducting polymer. And those materials are being studied continually and competitively by growing the future display industry. But all these replacements are not good to commercialize better than as much as ITO because their sheet resistance and transmittancy are not enough to. On this thesis we made Horizental and vertical nanowires, has high electric conductivity , good surface and also not easy to get in ITO. And we deposited channelling nonowire on Sappahire substrate. We tested on; deposited degree is 700~1000℃, Growth-pressure is 10Torr. And we used mixture gas; it is made by mixing H2 on Ar gas, as reactant gas. (H2 content : 4%, 0.5%, 0.2%, 0.05%) As the way of knowing the structure characters Scanning Electron Microscopy(SEM), Transmission Electron Microscopy(TEM), X-ray Diffraction(XRD), Atomic Force Microscopy(AFM) are used. Analysis result through all those equipments is that; at first SnO2 served as tip and it make a very long tail by making Horizental nanowires. As a result we finally got nanowires formed by Horizental nanowires, having hight electrical conductivity and also surface is perfect.