AFM 기반 펄스전기화학 실리콘 산화 나노 패터닝에 관한 연구

Abstract

This is a study of a pulse electrochemical nanopatterning (PECNP) process on a (100) silicon (p-type) wafer surface using a modified atomic force microscope(AFM). PECNP uses DC pulse rather than continuous current-based electrochemical processes. This method uses intermittent DC pulse power to prevent excessive electrolytic dissolution. The pulses were utilized in conjunction with a AFM to confine the oxidation of the silicon surface. The pulses generate an electrochemical reaction, inducing nanoscale silicon oxide deposits on the wafer surface. This research focused on variations in oxide dimensions according to pulse conditions and tip–sample distance. We examined microgrooves produced on the Si wafer surface via dilute hydrogen fluoride etching. The nanoscale oxide deposits were removed by the chemical reaction of this etching process. These results enable us to predict the effects of PECNP machining on a wafer surface. This study could provide precise control structures for creating new parameters.