귀금속 촉매가 첨가된 SnO2박막의 특성

Abstract

Thin films of platinum were deposited on a Al2O3/ONO(SiO2-Si3N4-SiO2)/Si-substrate with an 2-inch Pt(99.99%) target at room temperature for 20, 30 and 60 min by DC magnetron sputtering, respectively X-Ray Diffract meter(XRD) was used to analyze the crystallanity of the thin films and Field emission scanning electron microscopy (FE-SEM) was employed for the investigation on crystal growth. The densification and the grain growth of the sputtered films have a considerable effect on sputtering time and annealing temperatures. The resistance of the Pt thin films was decreased with increasing deposition time and sintering temperature. Pt micro heater thin film deposited for 60 min by DC magnetron sputtering on an Al2O3/ONO-Si substrate and annealed at 600℃ for 1 h in air is found to be a most suitable micro heater with a generation capacity of 350℃ temperature and 645 mW power at 5.0 V input voltage. Adherence of Pt thin film and Al2O3 substrate was also found excellent. This characteristic is in good agreement with the uniform densification and good crystallanity of the Pt film. Efforts are on progress to find the parameters further reduce the power consumption and the results will be presented as soon as possible. Moreover, Pt-doped SnO2 sensors combined with above micro heater showed highest sensitivity to CO gas when annealed at 600℃.