분무열분해법으로 성장된 SnO₂:Li 박막의 구조와 광학적 전기적 특성

Abstract

SnO₂ and SnO₂:Li films were deposited on the glass substrates by the spray pyrolysis. SnO₂:Li films were deposited at a substrate temperature of 525 ℃ using an spray solution consisted of tin chloride and lithium chloride. Transparent and conducting SnO₂:Li films deposited at a substrate temperature of 525℃ were identified as tetragonal structure with preferred (110) and (200) plane and with lattice constant a = 4.737 Å, c = 3.186 Å. The optical transmission of the sample deposited with a Li concentration of 17.5 wt.% was about 80% in the wavelength rage from 600 nm to 1200 nm. The optical energy band gap of the SnO₂:Li film prepared with a Li concentration of 17.5 wt.% was 3.78 eV. SnO₂:Li films were confirmed a p-type semiconductors from the results of the Hall effect measurement. The resistivity and the carrier concentration of the SnO₂:Li films deposited at Li concentration of 17.5 wt.% were 1.18 x 10-2, 1.19 x 1019cm-3, respectively.