RF-sputtering에 의한 ZrO2 박막 증착시 plasma 형성 조건이 박막 특성에 미치는 영향에 관한 연구

Abstract

ZrO2 is investigated in this work to replace SiO2 as the gate dielectric material in metal-oxide-semiconductor devices for its high dielectric constant, good thermal stability on silicon, and large band gap. ZrO2 films were deposited on p-Si(100) wafer by rf-sputtering process using a zirconium precursor, oxygen and argon gas flow. The process parameters investigated were the target power, the sputtering oxygen gas flow rate and the substrate temperature. The films particle size of top surface, thickness of crose-sectional are increased as a function of the target power, the substrate temperature were increased. The thickness of crose-sectional is decreased, the roughness of top surface is increased as a function of the oxygen gas flow rate was increased. The structure and film optical properties were investigated by X-ray diffraction(XRD), the particle size and thickness were investigated by scanning electron microscopy(SEM) and the roughness was investigated by atomic force microscopy(AFM).