DC 마그네트론 스퍼터법으로 제조한 NiCr(80:20) 미세 발열체의 특성

Abstract

NiCr thin film was deposited by DC magnetron Sputtering on Al2O3/Si substrate with NiCr(80:20) alloy target. NiCr thin films were annealed by two annealing treatments. First, NiCr thin films were annealed at 400℃, 500℃ and 600℃ for 6 hours in air or H2 ambient, respectively. Second, NiCr thin films were annealed at 300℃, 400℃, 500℃, 600℃and 700℃ for 6 hours in H2 after annealing at 500℃ for 6 hours in air atmosphere, respectively. To analyze NiCr thin film properties, the changes of its micro structure were investigated through field emission scanning electron microscope(FESEM). X-ray photoelectron spectroscopy(XPS) was used to analyze a surface characteristic of NiCr thin film. Auger electron spectroscopy (AES) was used to analyze depth profile of NiCr thin films and interdiffusion between a NiCr thin film and a Al2O3 insulating film. Resistance of NiCr thin films were measured by four point prove technique. The generated heats were measured by infrared thermometer through the application of DC voltage (5V/12V). NiCr thin film showed the small and uniform particle distribution in air ambient and the large crystal growth in H2 ambient. After annealing, Cr elements existed the inside of NiCr thin film, whereas large Ni elements distributed around the surface, gradually decreasing inside. Maximum temperature generated heat by NiCr micro heater was 173℃. We expect that our results will be a useful reference in the realization of NiCr micro heater.