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태양 전지용 CuInSe₂ 단결정 박막 성장과 태양 전지로의 응용

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Author(s)
하종호
Issued Date
2004
Abstract
The stoichiometric mixture of evaporating materials for the CuInSe₂ single crystal thin film was prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal CuInSe₂, it was found tetragonal structure whose lattice constant a0 and c0 were 5.783 Å and 11.621 Å, respectively.
To obtain the CuInSe₂ single crystal thin film , CuInSe₂ mixed crystal was deposited on throughly etched GaAs(100) by the hot wall epitaxy(HWE) system. The source and substrate temperature were 620 ℃ and 410 ℃ respectively. The crystalline structure of CuInSe₂ single crystal thin film was investigated by the double crystal X-ray diffraction.
Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by impurity scattering in the temperature range 30 K to 100 K and by lattice scattering in the temperature range 100 K to 293 K. The temperature dependence of the energy band gap of the CuInSe₂ obtained from the absorption spectra was well described by the Varshni's relation, E_(g)(T) = 1.1851 eV - (8.99 × 10^(-4) eV/K)T²/(T + 153 K). The crystal field and the spin-orbit splitting energies for the valence band of the CuInSe₂ have been estimated to be 0.0087 eV and 0.2329 eV at 10 K, respectively, by means of the photocurrent spectra and the Hopfield quasicubic model. These results indicate that the splitting of the Δso definitely exists in the Γ7 states of the valence band of the CuInSe₂. The three photocurrent peaks observed at 10K are ascribed to the A₁-, B₁-, and C₁-exciton peaks for n = 1. From the photoluminescence measurement of CuInSe₂ single crystal thin film , we observed free excition (Ex) observable only in high quality crystal and neutral acceptor-bound exciton (A˚,X) having very strong peak intensity. And, the full width at half maximum and binding energy of neutral accepor bound excition were 7.0 meV and 5.9 meV, respectively. By Haynes rule, an activation energy of impurity was 59 meV.
The open-circuit voltage, short current density, fill factor and conversion efficiency of n-CdS/p-CuInSe₂ heterojunction solar cells under 80 mW/cm² illumination were found to be 0.51 V, 29.3 mA/cm², 0.76 and 14.3 % respectively.
Alternative Title
Growth of CuInSe₂ single crystal thin film for solar cell development and its solar cell application
Alternative Author(s)
Ha, Jong-ho
Affiliation
조선대학교 대학원
Department
일반대학원 기계공학과
Advisor
홍명석
Awarded Date
2005-02
Table Of Contents
목차
ABSTRACT = ⅶ
제 1 장 서론 = 1
1.1 연구배경 = 1
1.2 연구동향 = 4
1.3 연구목적 = 7
제 2 장 이론적 배경 = 8
2.1 에너지 띠 구조 = 8
2.1.1 전도 띠 구조와 띠 간격 = 8
2.1.1.1 Γ₁ 띠와 Kane 모형 = 8
2.1.1.2 L₁ 띠와 X₁ 띠 = 11
2.1.2 호울 띠의 구조 = 12
2.2 전기수송이론 = 12
2.2.1 Boltzmann 전기 수송 방정식 = 13
2.2.2 전기 수송 상수 = 14
2.2.2.1 Γ₁ 띠에 대한 수송상수 = 14
(1) 운반자 이동도 = 14
(2) Hall 계수 = 15
(3) Hall 산란 인자 = 15
2.2.2.2 다중 띠 Hall 효과와 전기 전도도 = 15
2.2.3 산란기구 = 16
2.2.3.1 Γ 띠에서의 산란 = 16
2.2.3.2 L₁ 및 X₁ 띠에서의 산란 [51] = 17
2.2.3.3 호울 띠의 산란 [54] = 17
2.3 광발광 = 17
2.3.1 발광성 재결합 과정 = 17
2.3.2 엑시톤 재결합(exciton recombination) = 20
2.3.2.1. 자유 엑시톤(free exciton) = 20
2.3.2.2 속박된 엑시톤(bound exciton) = 20
2.3.3 띠간 재결합(Band to band recombination) = 21
2.3.4. 띠와 불순물 간의 재결합(Band to impurity recombination) = 22
2.3.5. 주개-받개 쌍(Donor-acceptor pair) 재결합 = 23
2.3.6 포논(phonon) = 25
2.3.7 깊은 준위에 의한 전이(Deep level transition) = 25
2.3.8 태양 전지 효율 = 26
제 3 장 실험 및 측정 = 31
3.1 다결정 합성용 수평 전기로 제작 = 31
3.2 CuInSe₂ 다결정 합성 = 33
3.3 HWE에 의한 CuInSe₂ 단결정 박막 성장 = 33
3.4 결정구조 = 35
3.5 Hall 효과 = 36
3.6 광전류(photocurrent) 측정 = 37
3.7 광발광(photoluminescence) 측정 = 38
3.8 n-CdS/p-CuInSe₂ 이종 접합 태양 전지 제작 = 39
3.8.1 ITO(In₂O₃:Sn) 박막의 성장 = 39
3.8.2 n-CdS/p-CuInSe₂ 이종 접합 태양 전지 제작 = 40
3.8.3 spectra response 측정 = 41
3.8.4 전류-전압 특성 측정 = 41
제 4 장 실험 결과 및 고찰 = 42
4.1 CuInSe₂의 결정 구조 및 단결정 박막 성장 조건 = 42
4.1.1 다결정 CuInSe₂ 의 결정 구조 = 42
4.1.2 HWE에 의한 CuInSe₂ 단결정 박막 성장 조건 = 46
4.2 CuInSe₂ 단결정 박막의 화학 양론적 조성비 = 50
4.3 CuInSe₂ 단결정 박막의 Hall 효과 = 50
4.4 CuInSe₂ 단결정 박막의 광흡수 스팩트럼 = 53
4.5 CuInSe₂ 단결정 박막의 광전류(photocurrent) = 56
4.6 CuInSe₂ 단결정 박막의 광발광(photoluminescence) = 62
4.7 n-CdS/p-CuInSe₂ 이종 접합 태양 전지의 효율 및 특성 = 65
4.7.1 n-CdS/p-CuInSe₂ 이종 접합 태양 전지의 spectra response = 65
4.7.2 n-CdS/p-CuInSe₂ 이종 접합 태양 전지의 J-V 특성, fill factor 및 효율 = 67
4.7.3 n-CdS/p-CuInSe₂ 이종 접합 태양 전지의 에너지띠 모델 = 70
제 5 장 결론 = 72
참고문헌 = 74
Degree
Doctor
Publisher
조선대학교 대학원
Citation
하종호. (2004). 태양 전지용 CuInSe₂ 단결정 박막 성장과 태양 전지로의 응용.
Type
Dissertation
URI
https://oak.chosun.ac.kr/handle/2020.oak/5767
Appears in Collections:
General Graduate School > 4. Theses(Ph.D)
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