이황화 몰리브덴을 이용한 p-n 이종접합 고감도 광센서 연구

Abstract

Transition metal dichalcogenides (TMDs) hold promise as next-generation materials for electronic, optoelectronic, and sensor devices due to their inherent characteristics in two-dimensional semiconductors. Among these, MoS2 has garnered significant interest owing to its distinctive electronic, optical, and catalytic properties. Efforts have focused on exploring MoS2's potential across various applications, serving notably in high-mobility transistors with an exceptional on/off ratio (108) and mobility (70 - 100 cm²/Vs). Its wide light absorption spectrum, spanning from visible to near-infrared wavelengths (350 - 950 nm) and surpassing GaAs and Si by a considerable margin, positions MoS2 as an excellent candidate for photonic devices. However, limitations in scalability during fabrication processes, varying methods like mechanical/chemical exfoliation and chemical vapor deposition, and the absence of high-quality p-n junctions hinder practical applications of MoS2. While photodetectors based on MoS2 heterostructures display remarkable characteristics such as high sensitivity (up to 7 A/W) and broad band response, their complex fabrication processes present challenges for widespread implementation. Additionally, conventional doping methods for MoS2 pose limitations in the design of pn junction structures. In addressing these limitations, this study proposes efficient approaches for forming a p-n junction structure by sulfurizing Mo metal patterned on p-Si and introduces two methods— layered doping and surface transfer doping using BVD (Benzyl Viologen Dichloride) for effective n-type MoS2 film formation. This methodology has demonstrated significant progress, achieving a photoconversion efficiency of 411.4 A/W and rapid response times of 19.8ms (rise) and 66ms (fall).