2차원 전이금속칼코겐 화합물 기반 듀얼 게이트 전계효과 트랜지스터 특성 연구

Abstract

Two-dimensional(2D) transition-metal-Chalcogenides(TMCs) and its hetero structure have enormous attraction due to its tremendous electric and physical properties beyond traditional silicon-based semiconducting electronic applications. When applied as a channel layer of a field effect transistor using such characteristics, it exhibits extremely high mobility and blinking ratio characteristics, and optical devices using these characteristics also exhibit excellent performance. TMCs has a relatively good exfoliating property because it forms a van der Waals bond between the layers, Using these characteristics, the Mechanical exfoliation is still being actively studied. In this study, we made a device using the Mechanical exfoliation and confirmed the electrical and optoelectronic properties of the photodetector. In the future, this research expects that MISFET will greatly contribute to the application and commercialization of photodetection. First, Two-dimensional Molybdenum Diselenide has potential applications in photo-detection. In this study, we examined hetero structures based on Gr/h-BN/MoSe2 Top-gated Metal-Insulator-Semiconductor Field-effect Transistors and Si/SiO2/MoSe2 Back-gated Metal-Oxide-Semiconductor Field-effect Transistors. Also, we carried out electrical and optoelectronic characterizations of the Dual-gated MISFET-based photo-detector. The photo-detector exhibited effective electrical characteristics of the Back-gated MOSFET with a common top gate configuration and narrow current hysteresis. The responsivity and specific detectivity were, respectively, 314AW−1 and 2.2×1012cmHz1/2W −1, rendering the Dual-gated MISFET suitable for photodetection applications. Second, Recently, Two-dimensional materials improve the properties of existing silicon-based devices and are promising materials for electronic and optoelectronic applications. The Molybdenum Diselenide material has excellent charge mobility and photoresponse, so many studies are being conducted as an excellent material for application in various fields. In this study, a MoSe2 based field effect transistor was fabricated by mechanical exfoliation of MoSe2 in the bulk state, and electrical and optical properties were compared by fabricating a device using SiO2 and Si3N4, which are gate oxides, as an oxide film. Lastly, Two-dimensional Transition-Metal-Chalcogenides are promising for the next generation of electronic devices and sensors. In this paper, we reported on the fabrication and the characterizations of Back-gated Si/SiO2/GaSe based Metal-Oxide-Semiconductor Field-effect Transistor and Top-gated Gr/h-BN/GaSe based Metal-Insulator-Semiconductor Field-effect Transistor with common active layer. We investigated the morphological, as well as the electrical and optoelectronic properties, where device showed P-type behavior with good electrical tunability performance. The device exhibits photoresponsivity of 90mAW-1 at laser power value of 1.147㎼, ION/IOFF ratios exceeding 104 and long decay time. These promising experimental results promote the GaSe based MISFET for multifunctional electronic device.