대면적/단결정 Cu 박판을 이용한 대면적/단결정 hBN 합성

Abstract

For many applications such as separation of hydrogen isotopes, hydrogen production, and storage, large area single crystal hexagonal boron nitride (hBN) is required. The synthesis of large area single crystal hBN is a challanging task due to many defects such as grain boundaries and vacancies that affect its quality. Various researches showed that these defects are heavily dependent on the substarte material used for the synthesis of hBN during metal organic chemical vapor deposition (MOCVD) process. In this disseration, the polycrytal Cu foil of thickness of 0.025 mm was used as a starting material, and was converted into single crystal copper Cu(111) by contact free annaling method as confirmed by XRD analysis. This was carried out by finding the optimal conditions such as annealing time, temperature, and gas flow condituions. Then, large area single crystal hBN was grown on the surface of the single crystal Cu substrate by MOCVD at 1000°C. Microstructural tudies of synthesized hBN were carried out by x-ray diffraction, optical microscopy, scanning electron microscopy, and transmission electron microscopy. Lastly, synthesized hBN was transfered to the device for investigating its effectiveness for hydrogen separation application.