분무열분해법으로 성장된 P-형 ZnO 박막의 구조와 광학적 전기적특성

Abstract

ABSTRACT Structural, Optical and Electrical Properties of p-type ZnO Films Deposited by Spray Pyrolysis

Lim Su-Kyoung Advisor : Prof. Dong Ju Seo Ph. D. Department of physics Education Graduate School of Education Chosun University

ZnO:P films were deposited on the glass substrates by the spray pyrolysis using a spray solution consisted of zinc acetate and phosphorous acetate. Transparent and conducting ZnO:P films deposited at a substrate temperature of 420℃ were identified as hexagonal structure with preferred (002) and (101) and (103) plane and with lattice constant a =3.242Å and c =5.237Å. The optical transmission of the sample were about 70 ∼ 90 % in the wavelength rage from 400 nm to 1200 nm. The optical energy gap of the ZnO:P film prepared with a P concentration of 0 at.% was 3.229 eV. The optical energy gaps of the ZnO:P film were decreased with increasing P concentration in the samples. ZnO:P films were confirmed a p-type semiconductors from the results of the Hall effect measurement. The resistivity and the carrier concentration of the ZnO:P films deposited at P concentration of 4.0 at.% were 9.98 x10-3Ω.cm, 4.07 x1017cm-3, respectively.