Hot Wall Epitaxy(HWE)법에 의한 ZnIn2S4 단결정 박막 성장과 광학적 특성

Abstract

Single crystal ZnIn2S4 layers were grown on thoroughly etched semi-insulating GaAs(100) substrate at 450 ℃ with hot wall epitaxy (HWE) system by evaporating ZnIn2S4 source at 610 ℃. The crystalline structure of the single crystal thin films was investigated by the photoluminescence(PL) and Double crystal X-ray rocking curve(DCRC). The carrier density and mobility of ZnIn2S4 single crystal thin films measured with Hall effect by Van der Pauw method are 8.82×1017 cm-3 and 219 cm2/Vㆍs at 293 K, respectively. The temperature dependence of the energy band gap of the ZnIn2S4 obtained from the absorption spectra was well described by the Varshni's relation, Eg(T) = 2.9514 eV - (7.24 × 10-4 eV/K)T2/(T + 489 K). After the as-grown ZnIn2S4 single crystal thin films has been investigated impurity level of band by the photoluminescence(PL) spectrum at 10 K.