분무열분해법으로 성장된 CdO:Sn 박막의 구조와 광학적 전기적 특성

Abstract

CdO:Sn films were deposited on the glass substrates by spray pyrolysis. Transparent and conducting CdO films prepared at substrate temperatures ranging from 400℃ to 520℃ were identified as CdO with a preferred (111) orientation. For the sample prepared at a substrate temperature of 450℃, the crystal structure of the CdO:Sn film was identified as cubic with lattice constant a0=4.6953Å. The (200) plane of the CdO:Sn crystal grew more predominantly than the other planes, and its intensity increased with increasing up to 6at.%, after which it decreased. The optical transmission of the sample deposited at a Sn concentration of 4 at.% was about 70% in the wavelength range form 500 nm to 800 nm. Optical transmission of the CdO:Sn films increased with increasing Sn concentration. The optical energy band gap of the CdO:Sn films deposited at a Sn concentration of 3 at.% was 2.543 eV. The optical energy band gaps of the CdO:Sn films increased with increasing Sn concentration. Electric resistivity, carrier concentration, Hall coefficient and moobility of the CdO:Sn films deposited with a Sn concentration of 2 at.% were 1.21 × 10-4·cm , 7.47× 1020cm, -2.53 × 103 cm2/C, and 2.10 × 104 cm2/V·s respectively.