분무열분해법으로 성장된 CdO:F 박막의 구조와 광학적 전기적 특성

Abstract

CdO:F films were deposited on the glass substrates by spray pyrolysis. Transparent and conducting CdO films prepared at substrate temperatures ranging from 400℃ to 520℃ were identified as CdO with a preferred (111) orientation. For the sample prepared at a substrate temperature of 450℃, the crystal structure of the CdO:F film was identified as cubic with lattice constant a0=4.695Å. The (200) plane of the CdO:F crystal grew more predominantly than the other planes, and its intensity increased with increasing up to 6wt.%, after which it decreased. The optical transmission of the sample deposited at a F concentration of 4 wt.% was about 70 % in the wavelength range form 500 nm to 800 nm. Optical transmission CdO:F films increased with increasing F concentration. The optical energy band gap of the CdO:F films deposited at a F concentration of 3 wt.% was 2.66 eV. The optical energy band gaps of the CdO:F films increased with increasing F concentration. Electric resistivity and carrier concentration of the CdO:F films deposited with a F concentration of 5 wt.% were 4.63 × 10-5cm and 2.51× 1019cm.