분무열분해법으로 제조한 In₂O₃:Cr 박막의 구조와 광학적 전기적 특성

Abstract

In₂O₃:Cr (ICO) films were deposited on the glass substrates by spray pyrolysis. Transparent and conducting ICO films prepared with Cr contents [Cr/(Cr+In) atomic ratio] up to 1.88 at.% were identified as Cr -doped In₂O₃ (In₂O₃:Cr) with preferred orientation (222). The ICO lattice is the same as that of the In₂O₃ cubic structure, with Cr^(6+) substituting for In^(3+) associated interstitial O^(2-) in the In₂O₃. There are no new compounds in the ICO. The minimum resistivity and the maximum carrier concentration of the ICO films deposited at Cr content of 1.88 at% were 1.28×10^(-2)Ωcm, 3.98×10^(19)cm^(-3), respectively. The optical transmission of the sample deposited at a Cr content of 1.88 at.% was about 80% in the wavelength range form 300 nm to 800 nm. The optical energy band gap of the ICO films deposited at a Cr content of 1.88 at.% was 3.27 eV. The optical energy band gaps of the ICO films decreased with increasing Cr content of the samples.