3차원 그래핀으로 강화한 구리복합체의 전기전도도 연구

Abstract

A 3-dimensional graphene-copper composite (3DiGn-Cu) was synthesised by reinforcing Cu particles by graphene network via chemical vapor deposition (CVD). In comparison with oxygen-free high conductivity copper (OFHC Cu), the 3DiGn-Cu show a very close resistivity value at room temperature. The temperature dependence of resistivity is proportional to temperature as well. To explain these properties, it is considered a parallel circuit model consisting of a graphene network channel and a Cu network channel. It is found that in the graphene network channel, a semi-conductive conduction mechanism is operated, but a metallic conductivity is dominated in the Cu network channel. A role of interface between copper and graphene is also discussed to understand the overall conductivity mechanism. As a result, it is shown that the pure Cu powder can be reinforced by the 3-dimensional graphene network as well as be improved in electrical conductivity up to that of OFHC Cu.|A 3-dimensional graphene-copper composite (3DiGn-Cu) was synthesised by reinforcing Cu particles by graphene network via chemical vapor deposition (CVD). In comparison with oxygen-free high conductivity copper (OFHC Cu), the 3DiGn-Cu show a very close resistivity value at room temperature. The temperature dependence of resistivity is proportional to temperature as well. To explain these properties, it is considered a parallel circuit model consisting of a graphene network channel and a Cu network channel. It is found that in the graphene network channel, a semi-conductive conduction mechanism is operated, but a metallic conductivity is dominated in the Cu network channel. A role of interface between copper and graphene is also discussed to understand the overall conductivity mechanism. As a result, it is shown that the pure Cu powder can be reinforced by the 3-dimensional graphene network as well as be improved in electrical conductivity up to that of OFHC Cu.