화학기상증착법을 이용한 이황화 몰리브덴의 성장 및 특성 분석

Abstract

Molybdenum Disulfide(MoS2) has received significant attention recently for next generation electronics. Optoelectronics and sensor application due to large carrier-mobility, high current capacity, strong absorption in the visible frequency by band gap energy and mechanical robustness. In addition, the Intrinsic two dimensional nature of carriers in these chalcogenides semiconductors offers the advantages of superior vertical scaling for transistor topology. Therefore, the potential of these materials for low cost flexible and transparent electronics that could revolutionize technology is also very high. Obtain the high quality MoS2 flake or film remains a challenge. One promising technique is the growth of MoS2 flake or film by chemical vapor deposition(CVD) of Mo film and sulfurization. However, this method typically result in growth of MoS2 flakes in uncontrolled size and locations on the substrate. Here, we reported the use of patterned Mo film as seed material and sulfurization for the growth of crystalline MoS2 monolayers at perdefined location and size without etching step. To Optimization of crystal quality the growth temperature and pressure is changed. The structural and optical quality is characterized by FE-SEM, Raman and Photoluminescence.