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분무열분해법으로 제조한 In₂O₃:Cr 박막의 구조와 광학적 전기적 특성

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Author(s)
李美羅
Issued Date
2005
Abstract
In₂O₃:Cr (ICO) films were deposited on the glass substrates by spray pyrolysis. Transparent and conducting ICO films prepared with Cr contents [Cr/(Cr+In) atomic ratio] up to 1.88 at.% were identified as Cr -doped In₂O₃ (In₂O₃:Cr) with preferred orientation (222). The ICO lattice is the same as that of the In₂O₃ cubic structure, with Cr^(6+) substituting for In^(3+) associated interstitial O^(2-) in the In₂O₃. There are no new compounds in the ICO. The minimum resistivity and the maximum carrier concentration of the ICO films deposited at Cr content of 1.88 at% were 1.28×10^(-2)Ωcm, 3.98×10^(19)cm^(-3), respectively. The optical transmission of the sample deposited at a Cr content of 1.88 at.% was about 80% in the wavelength range form 300 nm to 800 nm. The optical energy band gap of the ICO films deposited at a Cr content of 1.88 at.% was 3.27 eV. The optical energy band gaps of the ICO films decreased with increasing Cr content of the samples.
Alternative Title
Structural, Optical and Electrical Properties of In₂O₃:Cr Films Deposited by Spray Pyrolysis
Alternative Author(s)
Lee, Mi-Ra
Affiliation
朝鮮大學校 敎育大學院
Department
교육대학원 물리교육
Advisor
徐東珠
Awarded Date
2005. 8
Table Of Contents
목차
표목차 = ⅲ
그림목차 = ⅳ
ABSTRACT = ⅵ
Ⅰ. 서론 = 1
Ⅱ. 이론 = 3
A. 결정구조 = 3
B. 반도체의 광흡수 = 6
C. Hall 효과 = 8
Ⅲ. 실험 = 10
A. In₂O₃:Cr 박막의 성장 = 10
B. In₂O₃:Cr특성측정 = 11
1. 박막의 결정 구조 = 11
2. 박막의 표면형태 및 조성비 = 12
3. 광흡수 측정 = 12
4. 박막의 전기적 특성 = 13
Ⅳ. 실험결과 및 고찰 = 14
A. In₂O₃:Cr 박막의 결정 구조 = 14
B. In₂O₃:Cr 박막의 표면형태 = 20
C. In₂O₃:Cr 박막의 화학적 조성 = 22
D. In₂O₃:Cr 박막의 광흡수와 광투과율 특성 = 24
E. In₂O₃:Cr 박막의 전기적 특성 = 29
Ⅴ. 결론 = 30
참고문헌 = 32
Degree
Master
Publisher
朝鮮大學校 敎育大學院
Citation
李美羅. (2005). 분무열분해법으로 제조한 In₂O₃:Cr 박막의 구조와 광학적 전기적 특성
Type
Dissertation
URI
https://oak.chosun.ac.kr/handle/2020.oak/4387
http://chosun.dcollection.net/common/orgView/200000234822
Appears in Collections:
Education > Theses(Master)(교육대학원)
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