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InSe2 박막의 열처리에 따른 전기적 특성에 관한 연구

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Author(s)
박윤주
Issued Date
2016
Abstract
Cadmium sulfide (CdS) is the most widely used cushioning membrane for conventional CIGS solar cells. However, since cadmium (Cd) is a heavy metal which is very harmful to humans and the environment, many alternative materials are being researched to replace it. In the solar cell industry, zinc selenide and indium selenide are the substitutes for cadmium to reduce environmental recycling costs. Indium selenide is a III-VI compound with a direct transition bandgap and has useful properties that can be used in electronic, optoelectronic and solar cells. Indium selenide is suitable as a buffer film for CIGS solar cells because it has a wide range of bandgap control (1.1 ∼ 3.5 eV) and is capable of hetero bonding with CIGS absorption layer. The structural, optical and electrical properties of indium selenide are greatly affected by the deposition process and the post-annealing process.
Methods for depositing indium selenide include a co-deposition method, a bridge method, a spray pyrolysis method, an electrodeposition method, a sol-gel method, a chemical vapor deposition method, an organic metal chemical vapor deposition method, and a sputtering method. Sputtering provides high deposition rates and good uniformity without toxic selenium-containing gases (H2Se or Se gas). Simultaneous sputtering can perform simple inline processing. Conditions for replacing the conventional buffer layer in CIGS solar cells require resistivity of ≤ 104 Ωcm, appropriate band gap energy (1.68 eV ≤ Eg ≤ 3.4 eV), and light transmittance of 80% or more. The light transmittance is directly affected by the film thickness, but defects and resistance and the like must be considered. In this experiment, indium selenide thin film and copper electrode were deposited using RF magnetron sputtering, and heat treatment was performed using RTA (Rapid Thermal Annealing). The properties of the thin films were measured using RT66A equipment.
Alternative Title
A Study on the Electrical Properties of InSe2 Thin Films by Annealing Process
Alternative Author(s)
Yun Ju Park
Affiliation
조선대학교 산업융합기술대학원
Department
산업기술융합대학원 전기기술융합공학과
Advisor
이우선
Awarded Date
2017. 2
Table Of Contents
ABSTRACT

Ⅰ. 서 론 1

Ⅱ. 이론적 고찰 3
A. RF 마그네트론 스퍼터링 3
1. RF 스퍼터링 4
2. 마그네트론 스퍼터링 5
B. 급속열처리 장치 (RTA) 7
C. CIGS 박막 태양전지 9
1. CIGS 박막 태양전지 구조 9
2. 박막 특성 12

Ⅲ. 실험 및 결과고찰 15
A. 5분 증착된 InSe2박막의 전압, 전류 특성 16
1. As-dep 상태의 전압, 전류 특성 16
2. RTA 200℃ 열처리 후 전압, 전류 특성 17
3. RTA 400℃ 열처리 후 전압, 전류 특성 18
4. 5분 증착된 박막의 as-dep, RTA 200℃, RTA 400℃ 비교 분석 19
B. 15분 증착된 InSe2 박막의 전압, 전류 특성 20
1. As-dep 상태의 전압, 전류 특성 20
2. RTA 200℃ 열처리 후 전압, 전류 특성 21
3. RTA 400℃ 열처리 후 전압, 전류 특성 22
4. 15분 증착된 박막의 as-dep, RTA 200℃, RTA 400℃ 비교 분석 23
C. 5분, 15분 증착된 InSe2박막의 전압, 전류 특성 24
1. As-dep 상태의 전압, 전류 특성 24
2. RTA 200℃ 열처리 후 전압, 전류 특성 25
3. RTA 400℃ 열처리 후 전압, 전류 특성 26
4. 5분, 15분 증착된 박막의 as-dep, RTA 200℃, RTA 400℃ 비교 분석 27

Ⅳ. 결론 28
Degree
Master
Publisher
조선대학교 산업융합기술대학원
Citation
박윤주. (2016). InSe2 박막의 열처리에 따른 전기적 특성에 관한 연구
Type
Dissertation
URI
https://oak.chosun.ac.kr/handle/2020.oak/1952
http://chosun.dcollection.net/common/orgView/200000265885
Appears in Collections:
Engineering > Theses(Master)(산업기술창업대학원)
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