분무열분해법으로 성장시킨 CdO:In 박막의 구조와 광학적 전기적 특성

Abstract

CdO : In films were deposited on the glass substrates by spray pyrolysis. Transparent and conducting CdO films prepared at substrate temperatures ranging from 400 ℃ to 520 ℃ were identified as CdO with a preferred orientation of (111) and (200). For the sample prepared at a substrate temperature of 450 ℃, the crystal structure of the CdO : In film was identified as cubic with lattice constant a_(0) = 4.695Å. The (111) plane of the CdO : In intensity increased with decreasing up to 3.75 at.%, after which it increased. The optical transmission of the sample deposited with In concentration (0~10 at.%) were 50 ~ 70 % in the wavelength range from 300 nm to 500 nm. Optical transmission of the CdO : In films increased with increasing In concentration. The optical energy band gap of the CdO : In films deposited with an In concentration of 8.75 at.% was 2.779 eV. The optical energy band gaps of the CdO : In films increased with increasing In concentration. Electric resistivity, carrier concentration, Hall coefficient and mobility of the CdO : In films deposited with an In concentration of 3.75 at.% were 3.745 x 10^(-4)Ω·cm, 7.0307 x 10^(20) cm^(-3), -1.1492 x 10^(2) ㎠/C and 30.708 ㎠/V·s respectively.